Reaction products of guanidine compounds or salts thereof, polyepoxides and polyhalogens

ABSTRACT

Reaction products of guanidine compounds or salts thereof, polyepoxide compounds and polyhalogen compounds may be used as levelers in metal electroplating baths, such as copper electroplating baths, to provide good throwing power. Such reaction products may plate with good surface properties of the metal deposits and good physical reliability.

FIELD OF THE INVENTION

The present invention is directed to reaction products of guanidinecompounds or salts thereof, polyepoxide compounds and polyhalogencompounds for use in metal electroplating baths. More specifically, thepresent invention is directed to reaction products of guanidinecompounds or salts thereof, polyepoxide compounds and polyhalogencompounds for use in metal electroplating baths as levelers with goodthrowing power.

BACKGROUND OF THE INVENTION

Methods for electroplating articles with metal coatings generallyinvolve passing a current between two electrodes in a plating solutionwhere one of the electrodes is the article to be plated. A typical acidcopper plating solution includes dissolved copper, usually coppersulfate, an acid electrolyte such as sulfuric acid in an amountsufficient to impart conductivity to the bath, a source of halide, andproprietary additives to improve the uniformity of the plating and thequality of the metal deposit. Such additives include levelers,accelerators and suppressors, among others.

Electrolytic copper plating solutions are used in a variety ofindustrial applications, such as decorative and anticorrosion coatings,as well as in the electronics industry, particularly for the fabricationof printed circuit boards and semiconductors. For circuit boardfabrication, typically, copper is electroplated over selected portionsof the surface of a printed circuit board, into blind vias and trenchesand on the walls of through-holes passing between the surfaces of thecircuit board base material. The exposed surfaces of blind vias,trenches and through-holes, i.e. the walls and the floor, are first madeconductive, such as by electroless metal plating, before copper iselectroplated on surfaces of these apertures. Plated through-holesprovide a conductive pathway from one board surface to the other. Viasand trenches provide conductive pathways between circuit board innerlayers. For semiconductor fabrication, copper is electroplated over asurface of a wafer containing a variety of features such as vias,trenches or combinations thereof. The vias and trenches are metallizedto provide conductivity between various layers of the semiconductordevice.

It is well known in certain areas of plating, such as in electroplatingof printed circuit boards (“PCBs”), that the use of levelers in theelectroplating bath can be crucial in achieving a uniform metal depositon a substrate surface. Electroplating a substrate having irregulartopography can pose difficulties. During electroplating a voltage droptypically occurs within apertures in a surface which can result in anuneven metal deposit between the surface and the apertures.Electroplating irregularities are exacerbated where the voltage drop isrelatively extreme, that is, where the apertures are narrow and tall.Consequently, a metal layer of substantially uniform thickness isfrequently a challenging step in the manufacture of electronic devices.Leveling agents are often used in copper plating baths to providesubstantially uniform, or level, copper layers in electronic devices.

The trend of portability combined with increased functionality ofelectronic devices has driven the miniaturization of PCBs. Conventionalmultilayer PCBs with through-hole interconnects are not always apractical solution. Alternative approaches for high densityinterconnects have been developed, such as sequential build uptechnologies, which utilize blind vias. One of the objectives inprocesses that use blind vias is the maximizing of via filling whileminimizing thickness variation in the copper deposit between the viasand the substrate surface. This is particularly challenging when the PCBcontains both through-holes and blind vias.

Leveling agents are used in copper plating baths to level the depositacross the substrate surface and to improve the throwing power of theelectroplating bath. Throwing power is defined as the ratio of thethrough-hole center copper deposit thickness to its thickness at thesurface. Newer PCBs are being manufactured that contain boththrough-holes and blind vias. Current bath additives, in particularcurrent leveling agents, do not always provide level copper depositsbetween the substrate surface and filled through-holes and blind vias.Via fill is characterized by the difference in height between the copperin the filled via and the surface. Accordingly, there remains a need inthe art for leveling agents for use in metal electroplating baths forthe manufacture of PCBs that provide level copper deposits whilebolstering the throwing power of the bath.

SUMMARY OF THE INVENTION

Compounds include reaction products of one or more guanidine compoundsor salts thereof, one or more polyepoxide compounds and one or morepolyhalogen compounds.

Compositions include one or more sources of metal ions, an electrolyteand one or more compounds of reaction products of one or more guanidinecompounds or salts thereof, one or more polyepoxide compounds and one ormore polyhalogen compounds.

Methods include providing a substrate; providing a composition includingone or more sources of metal ions, and one or more compounds of reactionproducts of one or more guanidine compounds or salts thereof, one ormore polyepoxide compounds and one or more polyhalogen compounds;contacting the substrate with the composition; applying a current to thesubstrate and composition; and plating a metal on the substrate.

The compounds provide metal layers having a substantially level surfaceacross a substrate, even on substrates having small features and onsubstrates having a variety of feature sizes. The plating methodseffectively deposit metals in blind vias and through-holes such that themetal plating compositions have good throwing power. In addition, metaldeposits have good physical reliability in response to thermal shockstress tests.

DETAILED DESCRIPTION OF THE INVENTION

As used throughout this specification the following abbreviations shallhave the following meanings unless the context clearly indicatesotherwise: A=amperes; A/dm²=amperes per square decimeter; ° C.=degreesCentigrade; g=gram; ppm=parts per million; L=liter,μm=micron=micrometer; mm=millimeters; cm=centimeters; DI=deionized;mL=milliliter; Mw=weight average molecular weight; and Mn=number averagemolecular weight. All numerical ranges are inclusive and combinable inany order, except where it is clear that such numerical ranges areconstrained to add up to 100%.

As used throughout the specification, “feature” refers to the geometrieson a substrate. “Aperture” refers to recessed features includingthrough-holes and blind vias. As used throughout this specification, theterm “plating” refers to metal electroplating. “Guanidine compounds”means guanidine and derivatives of guanidine. “Deposition” and “plating”are used interchangeably throughout this specification. “Halide” refersto fluoride, chloride, bromide and iodide. “Leveler” refers to anorganic compound that is capable of providing a substantially level orplanar metal layer. The terms “leveler” and “leveling agent” are usedinterchangeably throughout this specification. “Accelerator” refers toan organic additive that increases the plating rate of theelectroplating bath. “Suppressor” refers to an organic additive thatsuppresses the plating rate of a metal during electroplating. The terms“printed circuit boards” and “printed wiring boards” are usedinterchangeably throughout this specification. The term “moiety” means apart of a molecule or polymer that may include either whole functionalgroups or parts of functional groups as substructures. The articles “a”and “an” refer to the singular and the plural.

Compounds are reaction products of one or more guanidine compounds orsalts thereof, one or more polyepoxide compounds and one or morepolyhalogen compounds. Guanidine compounds include but are not limitedto compounds having formula:

where R₁, R₂, R₃ and R₄ are the same or different and include, but arenot limited to: hydrogen; linear or branched, substituted orunsubstituted (C₁-C₁₀)alkyl; linear or branched carboxy(C₁-C₁₀)alkyl;linear or branched, substituted or unsubstituted amino(C₁-C₁₀)alkyl;substituted or unsubstituted aryl; linear or branched, substituted orunsubstituted aryl(C₁-C₁₀)alkyl; substituted or unsubstituted sulfonyl;—N(R₅)₂ where R₅ may be the same or different and is hydrogen or linearor branched, substituted of unsubstituted (C₁-C₁₀)alkyl; a moiety havingformula:

where R₆ and R₇ are the same or different and include, but are notlimited to: hydrogen; linear or branched, substituted or unsubstituted(C₁-C₁₀)alkyl; —N(R₅)₂ where R₅ is defined as above; linear or branchedcarboxy(C₁-C₁₀)alkyl; substituted or unsubstituted aryl; substituted orunsubstituted, linear or branched aryl(C₁-C₁₀)alkyl; a moiety havingformula:

where R₆ and R₇ are as defined above. Preferably, R₁, R₂, R₃ and R₄ arethe same or different and are chosen from hydrogen; linear or branched,substituted or unsubstituted (C₁-C₅)alkyl; linear or branchedcarboxy(C₁-C₅)alkyl; linear or branched, substituted or unsubstitutedamino(C₁-C₅)alkyl; substituted or unsubstituted phenyl; linear orbranched, substituted or unsubstituted phenyl(C₁-C₅)alkyl; —N(R₅)₂ whereR₅ is the same or different and is hydrogen, or substituted orunsubstituted, linear or branched (C₁-C₅)alkyl; the moiety of formula(II); and salts of formula (I). More preferably, R₁, R₂, R₃ and R₄ arethe same or different and are chosen from hydrogen; linear or branched,substituted or unsubstituted (C₁-C₄)alkyl; linear or branchedcarboxy(C₁-C₄)alkyl; linear or branched, substituted or unsubstitutedamino(C₁-C₄)alkyl; substituted or unsubstituted phenyl; —N(R₅)₂ where R₅is the same or different and is hydrogen or linear or branched,substituted or unsubstituted (C₁-C₄)alkyl; the moiety of formula (II);and salts of formula (I). Most preferably, R₁, R₂, R₃ and R₄ are thesame or different and are chosen from hydrogen; substituted orunsubstituted (C₁-C₂)alkyl; substituted or unsubstitutedamino(C₁-C₂)alkyl; substituted or unsubstituted phenyl; —N(R₅)₂ where R₅is the same or different and is hydrogen or substituted of unsubstituted(C₁-C₂)alkyl; carboxy(C₁-C₂)alkyl; the moiety of formula (II); and saltsof formula (I).

Guanidine salts include, but are not limited to salts having formula:

where R₁, R₂, R₃ and R₄ are as defined above and Y⁻ is a counter anionwhich includes, but is not limited to: halide, sulfate, hydrogensulfate, carbonate, bicarbonate, nitrate, nitrite, borate, perchlorate,phosphite or phosphate. Preferably, Y⁻ is halide, sulfate, hydrogensulfate, nitrate, carbonate or bicarbonate. More preferably, Y⁻ ishalide, sulfate, hydrogen sulfate, carbonate or bicarbonate. Mostpreferably, Y⁻ is halide, sulfate or bicarbonate. Halides are chosenfrom chloride, bromide, fluoride and iodide. Preferably, the halide ischloride, bromide or iodide. More preferably the halide is chloride orbromide.

Substituent groups on the R variables include, but are not limited to:hydroxyl; linear or branched hydroxy(C₁-C₅)alkyl; mercapto; linear orbranched mercapto(C₁-C₅)alkyl; linear or branched (C₁-C₅)alkyl;carboxy(C₁-C₅)alkyl; phenyl; phenyl(C₁-C₅)alkyl; —N(R′)_(b) where R′ isthe same or different and includes, but is not limited to: hydrogen or(C₁-C₅)alkyl and b is an integer of 2 to 3. Preferably, substituentgroups are chosen from hydroxyl; hydroxy(C₁-C₂)alkyl; mercapto;mercapto(C₁-C₂)alkyl; (C₁-C₂)alkyl; phenyl and —N(R′)_(b) where R′ isthe same or different and includes, but is not limited to: hydrogen or(C₁-C₂)alkyl and b is an integer of 2 to 3. More preferably thesubstituent groups are chosen from hydroxyl; mercapto; (C₁-C₂)alkyl and—N(R′)_(b) where R′ is the same or different and includes, but is notlimited to: hydrogen or methyl and b is an integer of 2 to 3.

Polyepoxide compounds which may be used are those having 2 or moreepoxide moieties joined together by a linkage. Such polyepoxidecompounds include, but are not limited to, compounds having formula:

where R₈ and R₉ are independently chosen from hydrogen and (C₁-C₄)alkyl;A=OR₁₀ or R₁₁; R₁₀=((CR₁₂R₁₃)_(m)O), (aryl-O)_(p), CR₁₂R₁₃—Z—CR₁₂CR₁₃,or OZ′_(t)O; R₁₁=(CH₂)_(y); B is (C₅-C₁₂)cycloalkyl; Z=a 5- or6-membered ring; Z′ is R₁₄OArOR₁₄, (R₁₅O)_(a)Ar(OR₁₅), or (R₁₅O)_(a),Cy(OR₁₅), Cy=(C₅-C₁₂)cycloalkyl; each R₁₂ and R₁₃ are independentlychosen from hydrogen, methyl, or hydroxyl; each R₁₄ represents(C₁-C₈)alkyl; each R₁₅ represents a (C₂-C₆)alkyleneoxy; each a=1-10;m=1-6; p=1-6; t=1-4; and y=0-6. R₈ and R₉ are preferably independentlychosen from hydrogen and (C₁-C₂)alkyl. When R₈ and R₉ are not joined toform a cyclic compound, it is preferred that R₈ and R₉ are bothhydrogen. When R₈ and R₉ are joined to form a cyclic compound, it ispreferred that A is R₁₁ or a chemical bond and that a(C₅-C₁₀)carbocyclic ring is formed. It is preferred that m=2-4. Phenyl-Ois the preferred aryl-O group for R₁₀. It is preferred that p=1-4, morepreferably 1-3, and still more preferably 1-2. Z is preferably a 5- or6-membered carbocyclic ring and, more preferably, Z is a 6-memberedcarbocyclic ring. Preferably, y=0-4, and more preferably, 1-4. WhenA=R₁₁ and y=0, then A is a chemical bond. Preferably, Z′=R₁₄OArOR₁₄ or(R₁₅O)_(a)Ar(OR₁₅). Each R₁₄ is preferably (C₁-C₆)alkyl and morepreferably (C₁-C₄)alkyl. Each R₁₅ is preferably (C₂-C₄)alkyleneoxy. Itis preferred that t=1-2. Preferably, a=1-8, more preferably, 1-6, andmost preferably, 1-4. Each Ar group may be substituted with one or moresubstituent groups which include, but are not limited to: (C₁-C₄)alkyl,(C₁-C₄)alkoxy or halogen. Preferably Ar is (C₆-C₁₅)aryl. Exemplary arylgroups are phenyl, methylphenyl, naphthyl, pyridinyl, bisphenylmethyland 2,2-bisphenylpropyl. Preferably Cy is (C₆-C₁₅)cycloalkyl. The(C₅-C₁₂)cycloalkyl groups for B may be monocyclic, spirocyclic, fused orbicyclic groups. Preferably B is a (C₅-C₁₀)cycloalkyl, more preferably,cyclooctyl.

Exemplary compounds of formula (V) include, but are not limited to:1,4-butanediol diglycidyl ether, ethylene glycol diglycidyl ether,diethylene glycol diglycidyl ether, triethylene glycol diglycidyl ether,glycerol diglycidyl ether, neopentyl glycol diglycidyl ether, propyleneglycol diglycidyl ether, dipropylene glycol diglycidyl ether andpoly(propyleneglycol) diglycidyl ether.

Polyhalogen compounds include halogen containing compounds which includetwo or more halogens which may react with the one or more guanidinecompounds or salts thereof. Such polyhalogen compounds include, but arenot limited to, compounds having the following formula:

X₁—R₁₆—X₂  (VII)

where X₁ and X₂ may be the same or different and are halogens chosenfrom chlorine, bromine, fluorine and iodine. Preferably, X₁ and X₂ areindependently chlorine, bromine and iodine. More preferably, X₁ and X₂are independently chlorine and bromine. R₁₆ is a moiety having formula:

—CH₂—R₁₇—CH₂—  (VIII)

where R₁₇ is a linear or branched, substituted or unsubstituted(C₁-C₁₅)alkyl, substituted or unsubstituted (C₆-C₁₂)cycloalkyl,substituted or unsubstituted (C₆-C₁₅)aryl, —CH₂—O—(R₁₈—O)_(q)—CH₂— whereR₁₈ is a substituted or unsubstituted, linear or branched (C₂-C₁₀)alkyland q is an integer of 1-10. Preferably, R₁₇ is a linear or branched,substituted or unsubstituted (C₁-C₈)alkyl, substituted or unsubstituted(C₆-C₈)cycloalkyl, substituted or unsubstituted phenyl,—CH₂—O—(R₈—O)_(q)—CH₂— where R₁₈ is a substituted or unsubstituted,linear or branched (C₂-C₈)alkyl and q is an integer of 1-8. Morepreferably, R₁₇ is a linear or branched, substituted or unsubstituted(C₁-C₄)alkyl, substituted or unsubstituted cyclohexyl, phenyl,—CH₂—O—(R₁₈—O)_(q)—CH₂— where R₁₈ is a substituted or unsubstituted(C₂-C₃)alkyl and q is an integer of 1-5. Substituent groups include, butare not limited to: halogens, hydroxyl, linear or branchedhydroxy(C₁-C₅)alkyl or linear or branched (C₁-C₅)alkoxy. Preferably, thesubstituent groups are halogens, hydroxyl or linear or branched(C₁-C₅)alkoxy. More preferably the substituents are hydroxyl or linearor branched (C₁-C₅)alkyl. Most preferably the substituents are linear orbranched (C₁-C₃)alkyl.

Examples of such polyhalogens are 1,2-dibromoethane; 1,2-dichloroethane;1,2-diiodoethane; 1,3-dibromopropane; 1,3-dichloropropane;1,3-diiodopropane; 1,4-dibromobutane; 1,4-dichlorobutane;1,4-diiodobutane; 1,5-dibromopentane; 1,5-dichloropentane;1,5-diiodopentane; 1,6-dibromohexane; 1,6-dichlorohexane;1,6-diiodohexane; 1,7-dibromoheptane; 1,7-dichloroheptane;1,7-diiodoheptane; 1,8-dibromooctane; 1,8-dichlorooctane;1,8-diiodooctane; 1,3-dichloro-2-propanol; 1,4-dichloro-2,3-butanediol;1-bromo-3-chloroethane; 1-chloro-3-iodoethane; 1,2,3-trichloropropane;1-bromo-3-chloroproane; 1-chloro-3-iodopropane; 1,4-dichloro-2-butanol;2,3-dichloro-1-propanol; 1,4-dichlorocyclohexane;1-bromo-3-chloro-2-methylpropane;1,5-dichloro[3-(2-chloroethyl)]pentane; 1,10-dichlorodecane;1,18-dichloroooctadecane; 2,2′-dichloroethyl ether;1,2-bis(2-chloroethoxy)ethane; diethylene glycolbis(2-chloroethyl)ether; triethylene glycol bis(2-chloroethyl)ether;2,2′-dichloropropyl ether; 2,2′-dichlorobutyl ether; tetraethyleneglycol bis(2-bromoethyl) ether and heptaethylene glycolbis(2-chloroethyl) ether.

One or more guanidine compounds or salts thereof are typically suspendedin isopropanol at 80° C. with dropwise addition of a mixture of one ormore polyepoxides and one or more polyhalogens. The temperature of theheating bath is then increased from 80° C. to 95° C. Heating withstirring is done for 2 hours to 8 hours. The temperature of the heatingbath is then reduced to room temperature with stirring for 12 hours to24 hours. The amounts for each component may vary but, in general,sufficient amount of each reactant is added to provide a product wherethe molar ratio of the moiety from the guanidine or salt thereof to themoiety from the polyepoxide to the moiety from the polyhalogen rangesfrom 0.5-1:0.5-1:0.05-0.5 based on monomer molar ratios.

The plating compositions and methods which include one or more of thereaction products are useful in providing a substantially level platedmetal layer on a substrate, such as a printed circuit board orsemiconductor chip. Also, the plating compositions and methods areuseful in filling apertures in a substrate with metal. The metaldeposits have good throwing power and good physical reliability inresponse to thermal shock stress tests.

Any substrate upon which metal can be electroplated may be used as asubstrate with the metal plating compositions containing the reactionproducts. Such substrates include, but are not limited to: printedwiring boards, integrated circuits, semiconductor packages, lead framesand interconnects. An integrated circuit substrate may be a wafer usedin a dual damascene manufacturing process. Such substrates typicallycontain a number of features, particularly apertures, having a varietyof sizes. Through-holes in a PCB may have a variety of diameters, suchas from 50 μm to 350 μm in diameter. Such through-holes may vary indepth, such as from 0.8 mm to 10 mm. PCBs may contain blind vias havinga wide variety of sizes, such as up to 200 μm diameter and 150 μm depth,or greater.

Conventional metal plating compositions may be used. The metal platingcompositions contain a source of metal ions, an electrolyte, and aleveling agent, where the leveling agent is a reaction product of one ormore guanidine compounds or salts thereof, one or more polyepoxidecompounds and one or more polyhalogen compounds. The metal platingcompositions may contain a source of halide ions, an accelerator and asuppressor. Metals which may be electroplated from the compositionsinclude, but are not limited to, copper, tin and tin/copper alloys.

Suitable copper ion sources are copper salts and include withoutlimitation: copper sulfate; copper halides such as copper chloride;copper acetate; copper nitrate; copper tetrafluoroborate; copperalkylsulfonates; copper aryl sulfonates; copper sulfamate; copperperchlorate and copper gluconate. Exemplary copper alkane sulfonatesinclude copper (C₁-C₆)alkane sulfonate and more preferably copper(C₁-C₃)alkane sulfonate. Preferred copper alkane sulfonates are coppermethanesulfonate, copper ethanesulfonate and copper propanesulfonate.Exemplary copper arylsulfonates include, without limitation, copperbenzenesulfonate and copper p-toluenesulfonate. Mixtures of copper ionsources may be used. One or more salts of metal ions other than copperions may be added to the present electroplating baths. Typically, thecopper salt is present in an amount sufficient to provide an amount ofcopper metal of 10 to 400 g/L of plating solution.

Suitable tin compounds include, but are not limited to salts, such astin halides, tin sulfates, tin alkane sulfonate such as tin methanesulfonate, tin aryl sulfonate such as tin benzenesulfonate and tinp-toluenesulfonate. The amount of tin compound in these electrolytecompositions is typically an amount that provides a tin content in therange of 5 to 150 g/L. Mixtures of tin compounds may be used in anamount as described above.

The electrolyte useful in the present invention may be alkaline oracidic. Typically the electrolyte is acidic. Suitable acidicelectrolytes include, but are not limited to, sulfuric acid, aceticacid, fluoroboric acid, alkanesulfonic acids such as methanesulfonicacid, ethanesulfonic acid, propanesulfonic acid and trifluoromethanesulfonic acid, aryl sulfonic acids such as benzenesulfonic acidp-toluenesulfonic acid, sulfamic acid, hydrochloric acid, hydrobromicacid, perchloric acid, nitric acid, chromic acid and phosphoric acid.Mixtures of acids may be advantageously used in the present metalplating baths. Preferred acids include sulfuric acid, methanesulfonicacid, ethanesulfonic acid, propanesulfonic acid, hydrochloric acid andmixtures thereof. The acids may be present in an amount in the range offrom 1 to 400 g/L. Electrolytes are generally commercially availablefrom a variety of sources and may be used without further purification.

Such electrolytes may optionally contain a source of halide ions.Typically chloride ions are used. Exemplary chloride ion sources includecopper chloride, tin chloride, sodium chloride, potassium chloride andhydrochloric acid. A wide range of halide ion concentrations may be usedin the present invention. Typically, the halide ion concentration is inthe range of from 0 to 100 ppm based on the plating bath. Such halideion sources are generally commercially available and may be used withoutfurther purification.

The plating compositions typically contain an accelerator. Anyaccelerators (also referred to as brightening agents) are suitable foruse in the present invention. Such accelerators are well-known to thoseskilled in the art. Accelerators include, but are not limited to,N,N-dimethyl-dithiocarbamic acid-(3-sulfopropyl)ester;3-mercapto-propylsulfonic acid-(3-sulfopropyl)ester;3-mercapto-propylsulfonic acid sodium salt; carbonicacid-dithio-o-ethylester-s-ester with 3-mercapto-1-propane sulfonic acidpotassium salt; bis-sulfopropyl disulfide; bis-(sodiumsulfopropyl)-disulfide; 3-(benzothiazolyl-S-thio)propyl sulfonic acidsodium salt; pyridinium propyl sulfobetaine;1-sodium-3-mercaptopropane-1-sulfonate; N,N-dimethyl-dithiocarbamicacid-(3-sulfoethyl)ester; 3-mercapto-ethyl propylsulfonicacid-(3-sulfoethyl)ester; 3-mercapto-ethylsulfonic acid sodium salt;carbonic acid-dithio-o-ethylester-s-ester with 3-mercapto-1-ethanesulfonic acid potassium salt; bis-sulfoethyl disulfide;3-(benzothiazolyl-S-thio)ethyl sulfonic acid sodium salt; pyridiniumethyl sulfobetaine; and 1-sodium-3-mercaptoethane-1-sulfonate.Accelerators may be used in a variety of amounts. In general,accelerators are used in an amount of 0.1 ppm to 1000 ppm.

Any compound capable of suppressing the metal plating rate may be usedas a suppressor in the present electroplating compositions. Suitablesuppressors include, but are not limited to, polypropylene glycolcopolymers and polyethylene glycol copolymers, including ethyleneoxide-propylene oxide (“EO/PO”) copolymers and butyl alcohol-ethyleneoxide-propylene oxide copolymers. Suitable butyl alcohol-ethyleneoxide-propylene oxide copolymers are those having a weight averagemolecular weight of 100 to 100,000, preferably 500 to 10,000. When suchsuppressors are used, they are typically present in an amount in therange of from 1 to 10,000 ppm based on the weight of the composition,and more typically from 5 to 10,000 ppm. The leveling agents of thepresent invention may also possess functionality capable of acting assuppressors.

In general, the reaction products have a number average molecular weight(Mn) of 200 to 10,000, typically from 300 to 50,000, preferably from 500to 8000, although reaction products having other Mn values may be used.Such reaction products may have a weight average molecular weight (Mw)value in the range of 1000 to 50,000, typically from 5000 to 30,000,although other Mw values may be used.

The amount of the reaction product (leveling agent) used in the metalelectroplating compositions depends upon the particular leveling agentsselected, the concentration of the metal ions in the electroplatingcomposition, the particular electrolyte used, the concentration of theelectrolyte and the current density applied. In general, the totalamount of the leveling agent in the electroplating composition rangesfrom 0.01 ppm to 500 ppm, preferably from 0.1 ppm to 250 ppm, mostpreferably from 0.5 ppm to 100 ppm, based on the total weight of theplating composition, although greater or lesser amounts may be used.

The electroplating compositions may be prepared by combining thecomponents in any order. It is preferred that the inorganic componentssuch as source of metal ions, water, electrolyte and optional halide ionsource are first added to the bath vessel, followed by the organiccomponents such as leveling agent, accelerator, suppressor, and anyother organic component.

The electroplating compositions may optionally contain at least oneadditional leveling agent. Such additional leveling agents may beanother leveling agent of the present invention, or alternatively, maybe any conventional leveling agent. Suitable conventional levelingagents that can be used in combination with the present leveling agentsinclude, without limitations, those disclosed in U.S. Pat. No. 6,610,192to Step et al., U.S. Pat. No. 7,128,822 to Wang et al., U.S. Pat. No.7,374,652 to Hayashi et al. and U.S. Pat. No. 6,800,188 to Hagiwara etal. Such combination of leveling agents may be used to tailor thecharacteristics of the plating bath, including leveling ability andthrowing power.

Typically, the plating compositions may be used at any temperature from10 to 65° C. or higher. Preferably, the temperature of the platingcomposition is from 10 to 35° C. and more preferably from 15 to 30° C.

In general, the metal electroplating compositions are agitated duringuse. Any suitable agitation method may be used and such methods arewell-known in the art. Suitable agitation methods include, but are notlimited to: air sparging, work piece agitation, and impingement.

Typically, a substrate is electroplated by contacting the substrate withthe plating composition. The substrate typically functions as thecathode. The plating composition contains an anode, which may be solubleor insoluble. Potential is typically applied to the electrodes.Sufficient current density is applied and plating performed for a periodof time sufficient to deposit a metal layer having a desired thicknesson the substrate as well as to fill blind vias, trenches andthrough-holes, or to conformally plate through-holes. Current densitiesmay range from 0.05 to 10 A/dm², although higher and lower currentdensities may be used. The specific current density depends in part uponthe substrate to be plated, the composition of the plating bath, and thedesired surface metal thickness. Such current density choice is withinthe abilities of those skilled in the art.

An advantage of the present invention is that substantially level metaldeposits are obtained on a PCB. Through-holes and/or blind vias in thePCB are substantially filled. A further advantage of the presentinvention is that a wide range of apertures and aperture sizes may befilled or conformally plated with desirable throwing power.

Throwing power is defined as the ratio of the average thickness of themetal plated in the center of a through-hole compared to the averagethickness of the metal plated at the surface of the PCB sample and isreported as a percentage. The higher the throwing power, the better theplating composition is able to conformally plate the through-hole. Metalplating compositions of the present invention have a throwing power of≧65%, preferably ≧70%.

The compounds provide metal layers having a substantially level surfaceacross a substrate, even on substrates having small features and onsubstrates having a variety of feature sizes. The plating methodseffectively deposit metals in through-holes such that the metal platingcompositions have good throwing power.

While the methods of the present invention have been generally describedwith reference to printed circuit board manufacture, it is appreciatedthat the present invention may be useful in any electrolytic processwhere an essentially level or planar metal deposit and filled orconformally plated apertures are desired. Such processes includesemiconductor packaging and interconnect manufacture.

The following examples are intended to further illustrate the inventionbut are not intended to limit its scope.

Example 1

Guanidine hydrochloride (9.56 g, 0.1 mol) was suspended in 20 mLisopropanol in a 100 mL round-bottom, three-neck flask equipped withcondenser, thermometer, and stir bar at 80° C. 1,4-Butanediol diglycidylether (12.13 g, 0.060 mol) and 1,4-dibromobutane (0.71 g, 0.003 mol)were mixed together and added dropwise to the solution, and the vialcontaining the 1,4-butanediol diglycidyl ether and 1,4-dibromobutane wasrinsed with 2 mL isopropanol. The heating bath temperature was increasedto 95° C. The resulting mixture was heated for 4 hours, then left tostir at room temperature overnight. The reaction mixture was rinsed withwater into a polyethylene bottle for storage and 50% sulfuric acid (10.8g) was added to solubilize the reaction product. The molar ratio ofguanidine moiety to epoxide moiety to aliphatic moiety from thedihalogen was 1:0.6:0.03 based on monomer molar ratios.

Example 2

Guanidine hydrochloride (9.53 g, 0.1 mol) was suspended in 20 mLisopropanol in a 100 mL round-bottom, three-neck flask equipped withcondenser, thermometer, and stir bar at 80° C. 1,4-Butanediol diglycidylether (12.11 g, 0.06 mol) was added dropwise to the solution, and thevial containing the 1,4-butanediol diglycidyl ether was rinsed with 2 mLisopropanol. The heating bath temperature was increased to 95° C. Theresulting mixture was heated for 4 hours and 1,4-dibromobutane (0.69 g,0.003 mol) was added dropwise to the reaction mixture. The oil bathtemperature was kept at 95° C. for 1 hour, and then the reaction wasleft to stir at room temperature overnight. The reaction mixture wasrinsed with water into a polyethylene bottle for storage and 50%sulfuric acid (4.6 g) was added to solubilize the reaction product. Themolar ratio of guanidine moiety to epoxide moiety to aliphatic moietyfrom the dihalogen was determined to be 1:0.6:0.03 based on monomermolar ratios.

Example 3

A plurality of copper electroplating baths were prepared by combining 75g/L copper as copper sulfate pentahydrate, 240 g/L sulfuric acid, 60 ppmchloride ion, 1 ppm of an accelerator and 1.5 g/L of a suppressor. Theaccelerator was bis(sodium-sulfopropyl)disulfide. The suppressor was anEO/PO copolymer having a weight average molecular weight of <5,000 andterminal hydroxyl groups. The electroplating baths also contained thereaction product from Example 1 in amounts of 1, 5, 10 or 20 ppm or thereaction product from Example 2 in amounts of 1, 5 or 10 ppm. Thereaction products were used without purification.

Example 4

Samples of either a 3.2 mm or a 1.6 mm thick of double-sided FR4 PCBs, 5cm×9.5 cm, having a plurality of through-holes were electroplated withcopper in Haring cells using the copper electroplating baths of Example3. The 3.2 mm thick samples had 0.3 mm diameter through-holes and the1.6 mm thick samples had 0.25 mm diameter through-holes. The temperatureof each bath was 25° C. A current density of 2.16 A/dm² was applied tothe 3.2 mm samples for 80 minutes and a current density of 3.24 A/dm²was applied to the 1.6 mm samples for 44 minutes. The copper baths thatincluded the reaction products from Example 1 were only used to platethe PCBs which were 1.6 mm thick. The copper baths that included thereaction product of Example 2 were used to plate copper on both the 3.2mm and the 1.6 mm PCBs. The copper plating process was repeated usingthe copper baths containing the reaction product of Example 2 on bothtypes of PCBs. The copper plated samples were analyzed to determine thethrowing power (“TP”) of the plating bath, and percent crackingaccording to the following methods.

Throwing power was calculated by determining the ratio of the averagethickness of the metal plated in the center of a through-hole comparedto the average thickness of the metal plated at the surface of the PCBsample. The throwing power is reported in Table 1 as a percentage.

The percent cracking was determined according to the industry standardprocedure, IPC-TM-650-2.6.8. Thermal Stress, Plated-Through Holes,published by IPC (Northbrook, Ill., USA), dated May, 2004, revision E.

TABLE 1 Panel Leveler Reaction Thickness Concentration TP CrackingProduct in mm in ppm (%) % Example 1 1.6 1 81 0 1.6 5 80 0 1.6 10 71 01.6 20 76 5 Example 2 1.6 1 101 0 1.6 5 80 0 1.6 10 80 0 1.6 20 79 0 3.21 87 0 3.2 5 76 0 3.2 10 85 0

The results showed that the throwing power exceeded 70% indicatingsuperior throwing power performance for the reaction products ofExamples 1 and 2. In addition, cracking was observed only in one samplecopper plated with the reaction product of Example 1. The lower thepercentage of cracking, the better is the plating performance.

Examples 5-9

Five reaction products were prepared according to the method describedin Example 1 except that the molar ratios of the monomers were varied asdisclosed in Table 2 below.

TABLE 2 Guanidine 1,4-butanediol Reaction Hydrochloride diglycidyl ether1,4-dibromobutane Product (M₁) (M₂) (M₃) Example 5 1 0.5 0.06 Example 61 0.5 0.13 Example 7 1 0.44 0.19 Example 8 1 0.38 0.25 Example 9 1 0.320.32

Example 10

Guanidine hydrochloride (4.78 g, 0.05 mol) and diphenylguanidine (10.50g, 0.05 mol) were suspended in 20 mL isopropanol in a 100 ml,round-bottom, three-neck flask equipped with condenser, thermometer, andstir bar at 80° C. 1,4-Butanediol diglycidyl ether (11.47 g, 0.057 mol)and 1,4-dibromobutane (1.36 g, 0.006 mol) were mixed together and addeddropwise to the solution, and the vial containing the 1,4-butanedioldiglycidyl ether and 1,4-dibromobutane was rinsed with 3 mL isopropanol.The heating bath temperature was increased to 95° C. The resultingmixture was heated for 4 hours, then left to stir at room temperatureovernight. The reaction mixture was rinsed with water into apolyethylene bottle for storage and 50% sulfuric acid (11.5 g) was addedto solubilize the reaction product. The molar ratio of guanidinehydrochloride to 1,3-diphenylguanidine to epoxide moiety to aliphaticmoiety from the dihalogen was 0.5:0.5:0.57:0.06 based on monomer molarratios.

Examples 11-28

The compounds of Table 3 are reacted together substantially according tothe process described for Examples 5-10 above. The molar ratios of eachcomponent are in Table 3.

TABLE 3 Guanidine Compounds or Molar ratio Salts thereof EpoxideDihalogen of M₁:M₂:M₃ Example (M₁) (M₂) (M₃) Moieties 11

1,4- Butanediol diglyciyl ether 1,4- dibromobutane 1:0.57:0.06 12

1,4- Butanediol diglycidyl ether 1,4- dibromobutane 1:0.57:0.06 13

1,4- Butanediol diglycidyl ether 1,4- dibromobutane 1:0.57:0.06 14

1,4- Butanediol diglycidyl ether 1,4- dibromobutane 1:0.57:0.06 15

1,4- Butanediol diglycidyl ether 1,4- dibromobutane 1:0.57:0.06 16

1,4- Butanediol diglycidyl ether 1,4- dibromobutane 1:0.57:0.06 17

1,4- Butanediol diglycidyl ether 1,4- dibromobutane 1:0.57:0.06 18

1,4- Butanediol diglycidyl ether 1,4- dibromobutane 1:0.57:0.06 19

1,4- Butanediol diglycidyl ether 1,4- dibromobutane 1:0.57:0.06 20

1,4- Butanediol diglycidyl ether 1,4- dichlorobutane 1:0.57:0.06 21

1,4- Butanediol diglycidyl ether 1,4- diiodobutane 1:0.57:0.06 22

1,4- Butanediol diglycidyl ether 1,4- dibromobutane 1:0.57:0.06 23

1,4- Butanediol diglycidyl ether 1,4- dibromobutane 1:0.57:0.06 24

1,4- Butanediol diglycidyl ether 1,4- dibromobutane 1:0.57:0.06 25

1,4- Butanediol diglycidyl ether 1,3- bis(bromomethyl)- benzene1:0.57:0.06 26

1,4- Butanediol diglycidyl ether 1,4- bis(bromomethyl)- benzene1:0.57:0.06 27

1,4- Butanediol diglycidyl ether 1,3- bis(bromomethyl)- cyclohexane1:0.57:0.06 28

1,4- Butanediol diglycidyl ether 1,3- bis(bromomethyl)- cyclohexane1:0.57:0.06

1-8. (canceled) 9: A method comprising: a) providing a substrate; b) providing a composition comprising one or more sources of metal ions, and one or more compounds comprising a reaction product of one or more guanidine compounds or salts thereof, one or more polyepoxide compounds and one or more polyhalogen compounds; c) contacting a substrate with the composition; d) applying a current to the substrate and the composition; and e) depositing a metal on the substrate. 10: The method of claim 9, wherein the one or more sources or metal ions are chosen from copper salts and tin salts. 11: The method of claim 9 wherein the substrate comprises a plurality of one or more of through-holes, trenches and vias. 12: The method of claim 9, wherein the one or more guanidine compounds have a formula:

wherein R₁, R₂, R₃ and R₄ are the same or different and comprise hydrogen; linear or branched, substituted or unsubstituted (C₁-C₁₀)alkyl; linear or branched carboxy(C₁-C₁₀)alkyl; linear or branched, substituted or unsubstituted amino(C₁-C₁₀)alkyl; substituted or unsubstituted aryl; linear or branched, substituted or unsubstituted aryl(C₁-C₁₀)alkyl; substituted or unsubstituted sulfonyl; —N(R₅)₂ where R₅ may be the same or different and are hydrogen or linear or branched, substituted or unsubstituted (C₁-C₁₀)alkyl; or a moiety having formula:

wherein R₆ and R₇ are the same or different and comprise hydrogen, linear or branched, substituted or unsubstituted (C₁-C₁₀)alkyl; linear or branched carboxy(C₁-C₁₀)alkyl; substituted or unsubstituted aryl; substituted or unsubstituted, linear or branched aryl(C₁-C₁₀)alkyl; —N(R₅)₂ where R₅ is defined as above; or a moiety having formula:

wherein R₆ and R₇ are as defined above. 13: The method of claim 9, wherein salts of the one or more guanidine compounds have a formula:

wherein R₁, R₂, R₃ and R₄ are as defined in claim 1 and Y⁻ comprises halide, sulfate, hydrogen sulfate, carbonate, bicarbonate, nitrate, nitrite, borate, perchlorate, phosphite or phosphate. 14: The method of claim 9, wherein the one or more polyepoxides have a formula:

wherein R₈ and R₉ are the same or different and are chosen from hydrogen and (C₁-C₄)alkyl; A=OR₁₀ or R₁₁; R₁₀=((CR₁₂R₁₃)_(m)O), (aryl-O)_(p), CR₁₂R₁₃—Z—CR₁₂CR₁₃, or OZ′_(t)O; R₁₁=(CH₂)_(y); B is (C₅-C₁₂)cycloalkyl; Z=a 5- or 6-membered ring; Z′ is R₁₄OArOR₁₄, (R₁₅O)_(a)Ar(OR₁₅), or (R₁₅O)_(a), Cy(OR₁₅), Cy=(C₅-C₁₂)cycloalkyl; each R₁₂ and R₁₃ are the same or different and are chosen from hydrogen, methyl, or hydroxyl; R₁₄ is (C₁-C₈)alkyl; R₁₅ is (C₂-C₆)alkyleneoxy; a=1-10; m=1-6; p=1-6; t=1-4; and y=0-6. 15: The method of claim 9, wherein the one or more polyhalogens have a formula: X₁—R₁₆—X₂  (VII) wherein X₁ and X₂ may be the same or different and are halogens chosen from chlorine, bromine, fluorine and iodine; R₁₆ is a moiety having formula: —CH₂—R₁₇—CH₂—  (VIII) wherein R₁₇ is a linear or branched, substituted or unsubstituted (C₁-C₁₈)alkyl, substituted or unsubstituted (C₆-C₁₂)cycloalkyl, substituted or unsubstituted (C₆-C₁₅)aryl, —CH₂—O—(R₁₈—O)_(q)—CH₂— where R₁₈ is a substituted or unsubstituted, linear or branched (C₂-C₁₀)alkyl and q is an integer of 1-10. 16: The method of claim 9, wherein the one or more polyepoxides are chosen from 1,4-butanediol diglycidyl ether, ethylene glycol diglycidyl ether, diethylene glycol diglycidyl ether, triethylene glycol diglycidyl ether, glycerol diglycidyl ether, neopentyl glycol diglycidyl ether, propylene glycol diglycidyl ether, dipropylene glycol diglycidyl ether and poly(propyleneglycol) diglycidyl ether. 17: The method of claim 9, wherein the one or more polyhalogen compounds are chosen from 1,2-dibromoethane; 1,2-dichloroethane; 1,2-diiodoethane; 1,3-dibromopropane; 1,3-dichloropropane; 1,3-diiodopropane; 1,4-dibromobutane; 1,4-dichlorobutane; 1,4-diiodobutane; 1,5-dibromopentane; 1,5-dichloropentane; 1,5-diiodopentane; 1,6-dibromohexane; 1,6-dichlorohexane; 1,6-diiodohexane; 1,7-dibromoheptane; 1,7-dichloroheptane; 1,7-diiodoheptane; 1,8-dibromooctane; 1,8-dichlorooctane; 1,8-diiodooctane; 1,3-dichloro-2-propanol; 1,4-dichloro-2,3-butanediol; 1-bromo-3-chloroethane; 1-chloro-3-iodoethane; 1,2,3-trichloropropane; 1-bromo-3-chloroproane; 1-chloro-3-iodopropane; 1,4-dichloro-2-butanol; 2,3-dichloro-1-propanol; 1,4-dichlorocyclohexane; 1-bromo-3-chloro-2-methylpropane; 1,5-dichloro[3-(2-chloroethyl)]pentane; 1,10-dichlorodecane; 1,18-dichlorooctadecane; 2,2′-dichloroethyl ether; 1,2-bis(2-chloroethoxy)ethane; diethylene glycol bis(2-chloroethyl)ether; triethylene glycol bis(2-chloroethyl)ether; 2,2′-dichloropropyl ether; 2,2′-dichlorobutyl ether; tetraethylene glycol bis(2-bromoethyl) ether and heptaethylene glycol bis(2-chloroethyl) ether. 18: The method of claim 9, wherein a molar ratio of a moiety of the one or more guanidine compounds or salts thereof to a moiety of the one or more polyepoxide compounds to a moiety of the one or more polyhalogen compounds is from 0.5-1:0.5-1:0.05-0.5 based on monomer molar ratios. 